主讲人：郭其新 日本佐贺大学教授
时间：2025年1月3日10：00
地点：数理学院十号楼222室
举办单位：数理学院
主讲人介绍：Prof. Dr. Guo received his B.E., M.E., and D.E. degrees in Electronic Engineering from Toyohashi University of Technology in 1990, 1992, and 1996, respectively. He is currently a Professor in the Department of Electrical and Electronic Engineering at Saga University. From April 2012 to March 2022, he served as the Director of the Saga University Synchrotron Light Application Center in Japan. His research focuses on the epitaxial growth and characterization of semiconductor materials. Prof. Guo has authored over 385 papers in renowned scientific journals, including Nature Communications, Advanced Materials, Physical Review B, and Applied Physics Letters. His work has received more than 11,000 citations, with an h-index of 54. He has been recognized as one of the world＇s top 2% scientists by Stanford University.
内容介绍：Ultrawide bandgap (UWBG) semiconductors, including AlN, BN, diamond, and Ga2O3 are at the forefront of extensive research efforts, covering a wide spectrum of materials, physics, devices, and applications. Microscale light emitting diodes (μLEDs) have attracted significant attention for their applications in augmented and virtual reality displays. Achieving high pixel density, efficiency, brightness, stable emission, and full-color emission is crucial for μLEDs. However, realizing full color μLED display technology poses challenges due to conventional mass transfer processes necessitating the extraction and precise transfer of red, green, and blue μLED chips from different epitaxial wafers. Rare earth (RE) doped semiconductors, characterized by strong and sharp emission resulting from intra-4f-shell transitions in RE ion cores, hold promise for applications in color display and luminescence devices. Extensive efforts have historically been dedicated to achieving visible color emission using RE doped GaN. Reports suggest that the luminescence efficiency of dopant emissions could significantly improve with an ultrawide bandgap host.